Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels
Crossref DOI link: https://doi.org/10.1134/S1063782615120040
Published Online: 2015-12-10
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bochkareva, N. I.
Rebane, Yu. T.
Shreter, Yu. G.
Text and Data Mining valid from 2015-12-01