Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions
Crossref DOI link: https://doi.org/10.1134/S1063782615120209
Published Online: 2015-12-10
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sobolev, N. A.
Shtel’makh, K. F.
Kalyadin, A. E.
Shek, E. I.
Text and Data Mining valid from 2015-12-01