Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy
Crossref DOI link: https://doi.org/10.1134/S1063782615120222
Published Online: 2015-12-10
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tuktamyshev, A. R.
Mashanov, V. I.
Timofeev, V. A.
Nikiforov, A. I.
Teys, S. A.
Text and Data Mining valid from 2015-12-01