Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer
Crossref DOI link: https://doi.org/10.1134/S106378261601019X
Published Online: 2017-12-24
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rykov, A. V.
Dorokhin, M. V.
Malysheva, E. I.
Demina, P. B.
Vikhrova, O. V.
Zdoroveishev, A. V.
Text and Data Mining valid from 2016-01-01