Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films
Crossref DOI link: https://doi.org/10.1134/S1063782616010231
Published Online: 2017-12-24
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zaynabidinov, S. Z.
Saidov, A. S.
Leiderman, A. Yu.
Kalanov, M. U.
Usmonov, Sh. N.
Rustamova, V. M.
Boboev, A. Y.
Text and Data Mining valid from 2016-01-01