GaAs structures with a gate dielectric based on aluminum-oxide layers
Crossref DOI link: https://doi.org/10.1134/S106378261602010X
Published Online: 2016-02-19
Published Print: 2016-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kalentyeva, I. L.
Vikhrova, O. V.
Zdoroveyshchev, A. V.
Danilov, Yu. A.
Kudrin, A. V.
Text and Data Mining valid from 2016-02-01
Version of Record valid from 2016-02-01
Article History
Received: 21 May 2015
Accepted: 5 June 2015
First Online: 19 February 2016