Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Crossref DOI link: https://doi.org/10.1134/S1063782616020263
Published Online: 2016-02-19
Published Print: 2016-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tikhomirov, V. G.
Zemlyakov, V. E.
Volkov, V. V.
Parnes, Ya. M.
Vyuginov, V. N.
Lundin, W. V.
Sakharov, A. V.
Zavarin, E. E.
Tsatsulnikov, A. F.
Cherkashin, N. A.
Mizerov, M. N.
Ustinov, V. M.
Text and Data Mining valid from 2016-02-01