Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure
Crossref DOI link: https://doi.org/10.1134/S1063782616050249
Published Online: 2016-05-15
Published Print: 2016-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Vexler, M. I.
Grekhov, I. V.
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