On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates
Crossref DOI link: https://doi.org/10.1134/S1063782616050250
Published Online: 2016-05-15
Published Print: 2016-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Virko, M. V.
Kogotkov, V. S.
Leonidov, A. A.
Voronenkov, V. V.
Rebane, Yu. T.
Zubrilov, A. S.
Gorbunov, R. I.
Latyshev, P. E.
Bochkareva, N. I.
Lelikov, Yu. S.
Tarhin, D. V.
Smirnov, A. N.
Davydov, V. Yu.
Shreter, Yu. G.
Text and Data Mining valid from 2016-05-01