Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor
Crossref DOI link: https://doi.org/10.1134/S1063782616070204
Published Online: 2016-07-06
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Romaka, V. A.
Rogl, P.
Romaka, V. V.
Kaczorowski, D.
Stadnyk, Yu. V.
Krayovskyy, V. Ya.
Horyn, A. M.
License valid from 2016-07-01