Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
Crossref DOI link: https://doi.org/10.1134/S1063782616090220
Published Online: 2016-09-16
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shengurov, V. G.
Chalkov, V. Yu.
Denisov, S. A.
Matveev, S. A.
Nezhdanov, A. V.
Mashin, A. I.
Filatov, D. O.
Stepikhova, M. V.
Krasilnik, Z. F.
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