On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
Crossref DOI link: https://doi.org/10.1134/S1063782616100201
Published Online: 2016-10-11
Published Print: 2016-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Novikov, I. I.
Karachinsky, L. Ya.
Kolodeznyi, E. S.
Bougrov, V. E.
Kurochkin, A. S.
Gladyshev, A. G.
Babichev, A. V.
Gadzhiev, I. M.
Buyalo, M. S.
Zadiranov, Yu. M.
Usikova, A. A.
Shernyakov, Yu. M.
Savelyev, A. V.
Nyapshaev, I. A.
Egorov, A. Yu.
License valid from 2016-10-01