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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Published Online: 2016-11-06

Published Print: 2016-11

Authors

Daniltsev, V. M.

Demidov, E. V.

Drozdov, M. N.

Drozdov, Yu. N.

Kraev, S. A.

Surovegina, E. A.

Shashkin, V. I.

Yunin, P. A.
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Text and Data Mining valid from 2016-11-01

Version of Record valid from 2016-11-01
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Article History

Received: 27 April 2016

Accepted: 10 May 2016

First Online: 6 November 2016

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