Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence
Crossref DOI link: https://doi.org/10.1134/S1063782616110154
Published Online: 2016-11-06
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kosarev, A. N.
Chaldyshev, V. V.
Preobrazhenskii, V. V.
Putyato, M. A.
Semyagin, B. R.
License valid from 2016-11-01