Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Crossref DOI link: https://doi.org/10.1134/S1063782616130066
Published Online: 2017-01-25
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lovygin, M. V.
Borgardt, N. I.
Bugaev, A. S.
Volkov, R. L.
Seibt, M.
License valid from 2016-12-01