On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
Crossref DOI link: https://doi.org/10.1134/S1063782617010249
Published Online: 2017-02-10
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voronenkov, V. V.
Virko, M. V.
Kogotkov, V. S.
Leonidov, A. A.
Pinchuk, A. V.
Zubrilov, A. S.
Gorbunov, R. I.
Latishev, F. E.
Bochkareva, N. I.
Lelikov, Y. S.
Tarkhin, D. V.
Smirnov, A. N.
Davydov, V. Y.
Sheremet, I. A.
Shreter, Y. G.
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