Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment
Crossref DOI link: https://doi.org/10.1134/S1063782617020063
Published Online: 2017-02-10
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Erofeev, E. V.
Fedin, I. V.
Kutkov, I. V.
Yuryev, Yu. N.
License valid from 2017-02-01