Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTeāSb2Te3 chalcogenide semiconductors
Crossref DOI link: https://doi.org/10.1134/S1063782617020191
Published Online: 2017-02-10
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sherchenkov, A. A.
Kozyukhin, S. A.
Lazarenko, P. I.
Babich, A. V.
Bogoslovskiy, N. A.
Sagunova, I. V.
Redichev, E. N.
Text and Data Mining valid from 2017-02-01
Version of Record valid from 2017-02-01
Article History
Received: 12 April 2016
Accepted: 18 April 2016
First Online: 10 February 2017