Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
Crossref DOI link: https://doi.org/10.1134/S106378261702021X
Published Online: 2017-02-10
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sitnikov, S. V.
Kosolobov, S. S.
Latyshev, A. V.
License valid from 2017-02-01