Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
Crossref DOI link: https://doi.org/10.1134/S1063782617020257
Published Online: 2017-02-10
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yurkov, S. N.
Mnatsakanov, T. T.
Levinshtein, M. E.
Tandoev, A. G.
Palmour, J. W.
License valid from 2017-02-01