Valence-band offsets in strained SiGeSn/Si layers with different tin contents
Crossref DOI link: https://doi.org/10.1134/S1063782617030058
Published Online: 2017-03-16
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bloshkin, A. A.
Yakimov, A. I.
Timofeev, V. A.
Tuktamyshev, A. R.
Nikiforov, A. I.
Murashov, V. V.
License valid from 2017-03-01