Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
Crossref DOI link: https://doi.org/10.1134/S1063782617050086
Published Online: 2017-05-18
Published Print: 2017-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Grashchenko, A. S.
Feoktistov, N. A.
Osipov, A. V.
Kalinina, E. V.
Kukushkin, S. A.
Text and Data Mining valid from 2017-05-01
Version of Record valid from 2017-05-01
Article History
Received: 22 November 2016
Accepted: 28 November 2016
First Online: 18 May 2017