High-voltage MIS-gated GaN transistors
Crossref DOI link: https://doi.org/10.1134/S106378261709010X
Published Online: 2017-09-03
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Erofeev, E. V.
Fedin, I. V.
Fedina, V. V.
Stepanenko, M. V.
Yuryeva, A. V.
License valid from 2017-09-01