Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
Crossref DOI link: https://doi.org/10.1134/S1063782617090111
Published Online: 2017-09-03
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goldman, E. I.
Levashov, S. A.
Naryshkina, V. G.
Chucheva, G. V.
License valid from 2017-09-01