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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process

Crossref DOI link: https://doi.org/10.1134/S1063782617090123

Published Online: 2017-09-03

Published Print: 2017-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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