Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region
Crossref DOI link: https://doi.org/10.1134/S1063782617100128
Published Online: 2017-10-07
Published Print: 2017-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Krivyakin, G. K.
Volodin, V. A.
Shklyaev, A. A.
Mortet, V.
More-Chevalier, J.
Ashcheulov, P.
Remes, Z.
Stuchliková, T. H.
Stuchlik, J.
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