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On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

Crossref DOI link: https://doi.org/10.1134/S1063782617100207

Published Online: 2017-10-07

Published Print: 2017-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zubov, F. I.

Semenova, E. S.

Kulkova, I. V.

Yvind, K.

Kryzhanovskaya, N. V.

Maximov, M. V.

Zhukov, A. E.
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