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Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Crossref DOI link: https://doi.org/10.1134/S1063782617120156

Published Online: 2017-12-08

Published Print: 2017-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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