Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations
Crossref DOI link: https://doi.org/10.1134/S1063782617120211
Published Online: 2017-12-08
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yurasov, D. V.
Drozdov, M. N.
Shmagin, V. B.
Novikov, A. V.
Text and Data Mining valid from 2017-12-01
Version of Record valid from 2017-12-01
Article History
Received: 27 April 2017
Accepted: 12 May 2017
First Online: 8 December 2017