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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers

Crossref DOI link: https://doi.org/10.1134/S1063782618020173

Published Online: 2018-02-05

Published Print: 2018-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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