Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures
Crossref DOI link: https://doi.org/10.1134/S1063782618020203
Published Online: 2018-02-05
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tyaginov, S. E.
Makarov, A. A.
Jech, M.
Vexler, M. I.
Franco, J.
Kaczer, B.
Grasser, T.
Text and Data Mining valid from 2018-02-01
Article History
Received: 22 June 2017
Accepted: 23 June 2017
First Online: 5 February 2018