Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model
Crossref DOI link: https://doi.org/10.1134/S106378261803003X
Published Online: 2018-03-12
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Altukhov, V. I.
Sankin, A. V.
Sigov, A. S.
Sysoev, D. K.
Yanukyan, E. G.
Filippova, S. V.
Text and Data Mining valid from 2018-03-01
Article History
Received: 10 April 2017
Accepted: 22 April 2017
First Online: 12 March 2018