Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies
Crossref DOI link: https://doi.org/10.1134/S1063782618040073
Published Online: 2018-04-03
Published Print: 2018-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Reddy, Baikadi Pranay Kumar
Teja, Karri Babu Ravi
Kandpal, Kavindra
Text and Data Mining valid from 2018-04-01
Article History
Received: 15 May 2017
Accepted: 18 December 2017
First Online: 3 April 2018