Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate
Crossref DOI link: https://doi.org/10.1134/S1063782618060027
Published Online: 2018-05-15
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Aleksandrov, O. V.
Mokrushina, S. A.
Text and Data Mining valid from 2018-05-15
Article History
Received: 28 August 2017
Accepted: 20 September 2017
First Online: 15 May 2018