Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Crossref DOI link: https://doi.org/10.1134/S1063782618060052
Published Online: 2018-05-15
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Evstigneev, V. S.
Varavin, V. S.
Chilyasov, A. V.
Remesnik, V. G.
Moiseev, A. N.
Stepanov, B. S.
Text and Data Mining valid from 2018-05-15
Article History
Received: 26 July 2017
Accepted: 5 September 2017
First Online: 15 May 2018