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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation

Crossref DOI link: https://doi.org/10.1134/S1063782618070229

Published Online: 2018-06-07

Published Print: 2018-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Tereshchenko, A. N.

Korolev, D. S.

Mikhaylov, A. N.

Belov, A. I.

Nikolskaya, A. A.

Pavlov, D. A.

Tetelbaum, D. I.

Steinman, E. A.
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Article History

Received: 31 October 2017

Accepted: 8 November 2017

First Online: 7 June 2018