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On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

Published Online: 2018-08-22

Published Print: 2018-09

Authors

Kolodeznyi, E. S.

Kurochkin, A. S.

Rochas, S. S.

Babichev, A. V.

Novikov, I. I.

Gladyshev, A. G.

Karachinsky, L. Ya.

Savelyev, A. V.

Egorov, A. Yu.

Denisov, D. V.
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Text and Data Mining valid from 2018-08-22

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Article History

Received: 13 March 2018

First Online: 22 August 2018

Document is current