Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions
Crossref DOI link: https://doi.org/10.1134/S1063782618090105
Published Online: 2018-08-22
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Okulich, E. V.
Okulich, V. I.
Tetelbaum, D. I.
Text and Data Mining valid from 2018-08-22
Version of Record valid from 2018-08-22
Article History
Received: 14 December 2017
First Online: 22 August 2018