Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate
Crossref DOI link: https://doi.org/10.1134/S1063782618120242
Published Online: 2018-11-07
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tikhov, S. V.
Gorshkov, O. N.
Antonov, I. N.
Tetelbaum, D. I.
Mikhaylov, A. N.
Belov, A. I.
Morozov, A. I.
Karakolis, P.
Dimitrakis, P.
Text and Data Mining valid from 2018-11-07
Version of Record valid from 2018-11-07
Article History
Received: 25 April 2018
Accepted: 7 May 2018
First Online: 7 November 2018