Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection
Crossref DOI link: https://doi.org/10.1134/S1063782618130031
Published Online: 2018-12-24
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Aleksandrov, O. V.
Ageev, A. N.
Zolotarev, S. I.
Text and Data Mining valid from 2018-12-01
Article History
Received: 27 March 2018
Accepted: 10 April 2018
First Online: 24 December 2018