Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices
Crossref DOI link: https://doi.org/10.1134/S1063782618130092
Published Online: 2018-12-24
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kudryashov, D. A.
Gudovskikh, A. S.
Baranov, A. I.
Text and Data Mining valid from 2018-12-01
Article History
Received: 18 June 2018
Accepted: 2 July 2018
First Online: 24 December 2018