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Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers

Crossref DOI link: https://doi.org/10.1134/S1063782618150113

Published Online: 2019-01-29

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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