Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well
Crossref DOI link: https://doi.org/10.1134/S1063782619010032
Published Online: 2019-04-23
Published Print: 2019-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bochkareva, N. I.
Ivanov, A. M.
Klochkov, A. V.
Shreter, Y. G.
Text and Data Mining valid from 2019-01-01
Version of Record valid from 2019-01-01
Article History
Received: 29 May 2018
Accepted: 13 June 2018
First Online: 23 April 2019