Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements
Crossref DOI link: https://doi.org/10.1134/S1063782619010081
Published Online: 2019-04-23
Published Print: 2019-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goldman, E. I.
Kuharskaya, N. F.
Levashov, S. A.
Chucheva, G. V.
Text and Data Mining valid from 2019-01-01
Article History
Received: 14 December 2017
Accepted: 29 December 2017
First Online: 23 April 2019