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Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

Crossref DOI link: https://doi.org/10.1134/S1063782619020143

Published Online: 2019-04-23

Published Print: 2019-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kukushkin, S. A.

Mizerov, A. M.

Grashchenko, A. S.

Osipov, A. V.

Nikitina, E. V.

Timoshnev, S. N.

Bouravlev, A. D.

Sobolev, M. S.
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Article History

Received: 21 July 2018

Accepted: 28 July 2018

First Online: 23 April 2019