Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)
Crossref DOI link: https://doi.org/10.1134/S1063782619030072
Published Online: 2019-04-23
Published Print: 2019-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ivanov, P. A.
Potapov, A. S.
Samsonova, T. P.
Text and Data Mining valid from 2019-03-01
Article History
Received: 25 October 2018
Accepted: 29 October 2018
First Online: 23 April 2019