Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches
Crossref DOI link: https://doi.org/10.1134/S1063782619030187
Published Online: 2019-04-23
Published Print: 2019-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tsai, Jung-Hui
Lin, Pao-Sheng
Chen, Yu-Chi
Liou, Syuan-Hao
Niu, Jing-Shiuan
Text and Data Mining valid from 2019-03-01
Article History
Received: 20 February 2018
Accepted: 27 September 2018
First Online: 23 April 2019