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High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects

Crossref DOI link: https://doi.org/10.1134/S1063782619040183

Published Online: 2019-05-06

Published Print: 2019-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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