Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
Crossref DOI link: https://doi.org/10.1134/S106378261906006X
Published Online: 2019-06-10
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ivanov, P. A.
Kudoyarov, M. F.
Potapov, A. S.
Samsonova, T. P.
Text and Data Mining valid from 2019-06-01
Version of Record valid from 2019-06-01
Article History
Received: 28 January 2019
Revised: 31 January 2019
Accepted: 31 January 2019
First Online: 10 June 2019