Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
Crossref DOI link: https://doi.org/10.1134/S1063782619060150
Published Online: 2019-06-10
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pechnikov, A. I.
Stepanov, S. I.
Chikiryaka, A. V.
Scheglov, M. P.
Odnobludov, M. A.
Nikolaev, V. I.
Text and Data Mining valid from 2019-06-01
Version of Record valid from 2019-06-01
Article History
Received: 27 November 2018
Revised: 25 January 2019
Accepted: 30 January 2019
First Online: 10 June 2019